Zhu, Xin ; Wang, Jing ; Pavlidis, Dimitris
(2005)
InP/GaAsSb/InP DHBT monolithic transimpedance amplifier with large dynamic range.
In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.
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Abstract
InP/GaAs0.51Sb0.49/InP DHBT (Double Heterojunction Bipolar Transistor) technology is investigated and presented for low power consumption and high power microwave amplification. A low power monolithic transimpedance circuit using InP/GaAsSb/ InP DHBTs presented a 11.0dB gain, 9.5GHz bandwidth, 46dB
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