Chee, Joolien ; Karru, Ratnakar ; Fisher, Timothy S. ; Peroulis, Dimitrios
(2005)
DC – 65 GHz characterization of nanocrystalline diamond leaky film for reliable RF MEMS switches.
In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.
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Abstract
This paper reports on the growth, patterning, and
characterization of plasma-enhanced chemical vapor deposition
(PECVD) thin diamond film for DC-65 GHz applications.
Nanocrystalline films are successfully demonstrated with an average
grain size of less than 60 nm that can replace conventional
low-quality dielectrics in RF MEMS switches. In addition to
their excellent surface properties, the diamond film has negligible
RF loss up to at least 65 GHz, but non-zero DC conductivity
of approximately 0.2 μS/m that allows the film to provide a
conductive path for potential trapped charges. Such films are
envisioned to be integrated in today’s capacitive RF MEMS
switches that suffer from charge-induced stiction.
Abstract
This paper reports on the growth, patterning, and
characterization of plasma-enhanced chemical vapor deposition
(PECVD) thin diamond film for DC-65 GHz applications.
Nanocrystalline films are successfully demonstrated with an average
grain size of less than 60 nm that can replace conventional
low-quality dielectrics in RF MEMS switches. In addition to
their excellent surface properties, the diamond film has negligible
RF loss up to at least 65 GHz, but non-zero DC conductivity
of approximately 0.2 μS/m that allows the film to provide a
conductive path for potential trapped charges. Such films are
envisioned to be integrated in today’s capacitive RF MEMS
switches that suffer from charge-induced stiction.
Document type
Conference or Workshop Item
(Paper)
Creators
Subjects
DOI
Deposit date
15 Feb 2006
Last modified
17 Feb 2016 14:30
URI
Other metadata
Document type
Conference or Workshop Item
(Paper)
Creators
Subjects
DOI
Deposit date
15 Feb 2006
Last modified
17 Feb 2016 14:30
URI
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