Veenstra, H. ; Hurkx, G.A.M. ; Heijden, E. v.d. ; Vaucher, C.S. ; Apostolidou, M. ; Jeurissen, D. ; Deixler, P.
(2005)
10-40GHz design in SiGe-BiCMOS and Si-CMOS –
linking technology and circuits to maximize
performance.
In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.
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Abstract
This paper reviews the relevance of the
widely used device metrics fT, fmax as well as the recently
introduced device metrics fA and fcross for broadband circuit
design. Usually, IC processes are benchmarked on the basis
of their fT and fmax. For most circuit applications however,
there is only an indirect relation between fT, fmax and circuit
bandwidths. Since the differential pair amplifier is a key
building block in broadband circuits, the metric fA provides
a nearly direct relation to broadband circuit performance.
This is demonstrated via the maximum operating frequency
of a current-mode logic frequency divider, processed in 3
generations of a BiCMOS process. Metric fcross is valuable
for the design of circuits employing a cross-coupled
differential pair as active negative resistance, such as in LCVCOs.
The metrics can be expressed in terms of transistor
parameters (e.g., Rb, Cbc, …), allowing to derive a link
between circuit performance and technology. Based on our
experience, we evaluate IC processes on the basis of fT, fA
and fcross rather than fT and fmax.
Abstract
This paper reviews the relevance of the
widely used device metrics fT, fmax as well as the recently
introduced device metrics fA and fcross for broadband circuit
design. Usually, IC processes are benchmarked on the basis
of their fT and fmax. For most circuit applications however,
there is only an indirect relation between fT, fmax and circuit
bandwidths. Since the differential pair amplifier is a key
building block in broadband circuits, the metric fA provides
a nearly direct relation to broadband circuit performance.
This is demonstrated via the maximum operating frequency
of a current-mode logic frequency divider, processed in 3
generations of a BiCMOS process. Metric fcross is valuable
for the design of circuits employing a cross-coupled
differential pair as active negative resistance, such as in LCVCOs.
The metrics can be expressed in terms of transistor
parameters (e.g., Rb, Cbc, …), allowing to derive a link
between circuit performance and technology. Based on our
experience, we evaluate IC processes on the basis of fT, fA
and fcross rather than fT and fmax.
Document type
Conference or Workshop Item
(Paper)
Creators
Subjects
DOI
Deposit date
15 Feb 2006
Last modified
17 Feb 2016 14:30
URI
Other metadata
Document type
Conference or Workshop Item
(Paper)
Creators
Subjects
DOI
Deposit date
15 Feb 2006
Last modified
17 Feb 2016 14:30
URI
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