Abstract

We report on the fabrication and characterization of 0.1 urn T-gate metamorphic InAlAs/InGaAs HEMTs on GaAs substrate with InAs mole fraction of 0.4. These devices present a good Schottky diode behavior, a drain current of 610mA/mm with an extrinsic transconductance of 680mS/mm. An intrinsic transconductance gm0 of 1150mS/mm and a current gain cutoff frequency fT of 195GHz are obtained. These good characteristics are similar to those obtained with lattice-matched HEMTs on InP substrate. Metamorphic HEMT is an attractive candidate for large scale and low cost MMIC production in the millimeter wave range.