0.1um metamorphic In0.4Al0.6As/In0.4Ga0.6As HEMTs on GaAs substrate

Bollaert, S. ; Cordier, Y. ; Happy, H. ; Zaknoune, M. ; Lepilliet, S. ; Cappy, A. (1998) 0.1um metamorphic In0.4Al0.6As/In0.4Ga0.6As HEMTs on GaAs substrate. In: Gallium Arsenide Applications Symposium. GAAS 1998, 5-6 October 1998, Amsterdam, The Netherlands.
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Abstract

We report on the fabrication and characterization of 0.1 urn T-gate metamorphic InAlAs/InGaAs HEMTs on GaAs substrate with InAs mole fraction of 0.4. These devices present a good Schottky diode behavior, a drain current of 610mA/mm with an extrinsic transconductance of 680mS/mm. An intrinsic transconductance gm0 of 1150mS/mm and a current gain cutoff frequency fT of 195GHz are obtained. These good characteristics are similar to those obtained with lattice-matched HEMTs on InP substrate. Metamorphic HEMT is an attractive candidate for large scale and low cost MMIC production in the millimeter wave range.

Abstract
Tipologia del documento
Documento relativo ad un convegno o altro evento (Atto)
Autori
AutoreAffiliazioneORCID
Bollaert, S.
Cordier, Y.
Happy, H.
Zaknoune, M.
Lepilliet, S.
Cappy, A.
Settori scientifico-disciplinari
DOI
Data di deposito
16 Feb 2006
Ultima modifica
17 Feb 2016 14:32
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