InP-based monolithic integrated PIN diode switches for mm-wave applications

Ziegler, Volker ; Berg, Michael ; Tobler, Hans ; Wolk, Claus ; Deufel, Reinhard ; Dickmann, Jürgen ; Trasser, Andreas ; Schumacher, Hermann ; Alekseev, Egor ; Pavlidis, Dimitris (1998) InP-based monolithic integrated PIN diode switches for mm-wave applications. In: Gallium Arsenide Applications Symposium. GAAS 1998, 5-6 October 1998, Amsterdam, The Netherlands.
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Abstract

We report on the measured performance of monolithic integrated mm-wave switching circuits which operate at Ka-Band. V-Band and W-Band as well as on a technology for multi-functional MMICs. The coplanar switches are using high-performance InGaAs PIN diodes as active switching elements. The focus of the illustrated measurement results is on the characteristics of the W-Band switches. The SPST (single-pole single-throw) switches exhibit a low minimum insertion loss of 0.66 dB (1.17 dB) at 85 GHz (84 GHz) with an extremely high corresponding isolation of 29.2 dB (24.5 dB). Even under extremely low DC-power consumption conditions of 0.95 mW (0.8 mW), the switches demonstrated impressive isolations of 23.7 dB (20.7 dB). Excellent mm-wave performance is also achieved with the 94 GHz SPDT (single-pole double-throw) switch. An insertion loss as low as 1.4 dB in transmit mode and 1.8 dB at 96 GHz in receive mode is obtained. A very high isolation value greater than 40 dB is observed. Furthermore, we are developing a heterointegration technology for multi-functional MMICs and present a first comparison between heterointegrated SPST switches (PIN + HFET layer structure) and the normal SPST switches (only PIN structure).

Abstract
Document type
Conference or Workshop Item (Paper)
Creators
CreatorsAffiliationORCID
Ziegler, Volker
Berg, Michael
Tobler, Hans
Wolk, Claus
Deufel, Reinhard
Dickmann, Jürgen
Trasser, Andreas
Schumacher, Hermann
Alekseev, Egor
Pavlidis, Dimitris
Subjects
DOI
Deposit date
16 Feb 2006
Last modified
17 Feb 2016 14:32
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