Accurate nonlinear resistive FET modeling for IMD calculations

García, José A. ; Pedro, José C. ; Carvalho, Nuno B. ; Mediavilla, Angel ; Tazón, Antonio (1998) Accurate nonlinear resistive FET modeling for IMD calculations. In: Gallium Arsenide Applications Symposium. GAAS 1998, 5-6 October 1998, Amsterdam, The Netherlands.
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Abstract

This work discusses the nonlinear modeling procedures required for intermodulation distortion (IMD) calculations of MESFETs biased in the resistive (linear) region. An automatic full two-sided characterization of Ids(Vgs, Vds) is compared against the previously published extraction of Ids(vds) in this problematic region. It is shown that this one-sided Taylor series extraction is insufficient for most applications of the FET in its triode zone, and thus an alternative method is proposed.

Abstract
Document type
Conference or Workshop Item (Paper)
Creators
CreatorsAffiliationORCID
García, José A.
Pedro, José C.
Carvalho, Nuno B.
Mediavilla, Angel
Tazón, Antonio
Subjects
DOI
Deposit date
16 Feb 2006
Last modified
17 Feb 2016 14:32
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