Abstract

This paper presents the design aspects and performance of a monolithic low noise amplifier (LNA) for X-band applications. The LNA, based on GaAs PM-HEMT technology, shows a noise figure of only 1.1 dB at room temperature and a gain of 19 dB with high gain flatness over a bandwidth of 30%, The design was induced by the requirements of real active phased array antenna modes, e. g. switched applications, high IP3 and damage level. A statistical analysis over a large number of LNAs is added showing the high yield and good uniformity of this device.