Small-signal model extraction technique dedicated to noise behaviour of microwave HBTs

Tartarin, J.G. ; Escotte, L. ; Graffeuil, J. (1998) Small-signal model extraction technique dedicated to noise behaviour of microwave HBTs. In: Gallium Arsenide Applications Symposium. GAAS 1998, 5-6 October 1998, Amsterdam, The Netherlands.
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Abstract

A complete on-wafer heterojunction bipolar transistors (HBTs) equivalent circuit parameters extraction technique is presented. It is based on the successive extraction of extrinsic and intrinsic elements. An improved method for parasitic inductance values determination is proposed. It results in a more accurate modelling of HBTs which is shown to be very useful especially for high frequency noise parameter modelling.

Abstract
Document type
Conference or Workshop Item (Paper)
Creators
CreatorsAffiliationORCID
Tartarin, J.G.
Escotte, L.
Graffeuil, J.
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DOI
Deposit date
16 Feb 2006
Last modified
17 Feb 2016 14:34
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