Global model for high-power HBTs suitable for CAD and device optimization

Dhondt, F. ; Barrette, J. ; Rolland, P.A. (1998) Global model for high-power HBTs suitable for CAD and device optimization. In: Gallium Arsenide Applications Symposium. GAAS 1998, 5-6 October 1998, Amsterdam, The Netherlands.
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Abstract

In this paper the authors present a novel global simulation of multifinger HBTs. It is based on the reunion of several models in a commercial CAD software. Each electrical, electromagnetic and thermal model is also used to optimize the performance of devices having complex topologies. We show the typical result of large signal simulation performed with a microwave simulation tool. This model accurately predicts coupled thermal and electrical effects in multifinger power devices.

Abstract
Document type
Conference or Workshop Item (Paper)
Creators
CreatorsAffiliationORCID
Dhondt, F.
Barrette, J.
Rolland, P.A.
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DOI
Deposit date
16 Feb 2006
Last modified
17 Feb 2016 14:34
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