Thermal modeling of GaAs FETs for MMICs CAD with modern design techniques

Giorgio, Agostino ; Gina Perri, Anna (1998) Thermal modeling of GaAs FETs for MMICs CAD with modern design techniques. In: Gallium Arsenide Applications Symposium. GAAS 1998, 5-6 October 1998, Amsterdam, The Netherlands.
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Abstract

In this paper new improved large and small signal thermal models of GaAs FETs are proposed, The models are available also in the polynomial form required for thermal CAD of low-power MMICs with low frequency ICs design technique as that based on physical parameters of the foundry. The aim of the modelling approach is to join together large and small signal thermal models, to achieve an efficient CAD technique, and to solve the bias and technology dependence of thermal coefficients.

Abstract
Tipologia del documento
Documento relativo ad un convegno o altro evento (Atto)
Autori
AutoreAffiliazioneORCID
Giorgio, Agostino
Gina Perri, Anna
Settori scientifico-disciplinari
DOI
Data di deposito
16 Feb 2006
Ultima modifica
17 Feb 2016 14:34
URI

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