Large signal dynamic properties of GaAs MESFET/HEMT devices under optical illumination.

Navarro, C. ; Zamanillo, J. M. ; Mediavilla, A. ; Garcia, J.L. (1998) Large signal dynamic properties of GaAs MESFET/HEMT devices under optical illumination. In: Gallium Arsenide Applications Symposium. GAAS 1998, 5-6 October 1998, Amsterdam, The Netherlands.
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Abstract

This paper is the result of an extensive investigation on the large signal dynamic behaviour (Pulsed I/V) of unipolar GaAs devices, in the overall I/V plane, when varying the incident optical input power. We have observed a hyperbolic dependence with the gate voltage along with a quasi -logarithmic dependence with the optical power. An empirical equation has been developed in order to take into account both effects, and the successive simulations show a very good agreement with the experimental data for different foundries and technological process.

Abstract
Tipologia del documento
Documento relativo ad un convegno o altro evento (Atto)
Autori
AutoreAffiliazioneORCID
Navarro, C.
Zamanillo, J. M.
Mediavilla, A.
Garcia, J.L.
Settori scientifico-disciplinari
DOI
Data di deposito
16 Feb 2006
Ultima modifica
17 Feb 2016 14:34
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