Abstract

This paper is the result of an extensive investigation on the large signal dynamic behaviour (Pulsed I/V) of unipolar GaAs devices, in the overall I/V plane, when varying the incident optical input power. We have observed a hyperbolic dependence with the gate voltage along with a quasi -logarithmic dependence with the optical power. An empirical equation has been developed in order to take into account both effects, and the successive simulations show a very good agreement with the experimental data for different foundries and technological process.