Abstract

Under the anisotropy of boundary conditions, a high-gap III-V semiconductor indicates behavior of pyroelectric crystal (in spite of it is a piezoelectric only). Partial strain limitation in the [111]-plate of this crystal provides its substantial electric response to the time-variation in temperature dT(t) or in pressure dp(t). Herewith the voltage sensitivity of semi-insulating GaAs sensor is close to one of the PZT ceramics. However, PZT cell-transducer used in sensor device needs to be integrated with the semiconductor amplifier. Unlike of this, the transducer and the amplifier are various parts of one crystal chip in the sensor device based on III-V crystal.