Abstract

The solution to the problem of transconductance compression in HEMT devices can be found by means of a new continuous drain-source current (Ids) model. The proposed model is able to reproduce the global I/V device behaviour under both static DC and dynamic pulsed operating conditions with an excellent fitting in all I/V regions, even in the case of using low and medium power HEMT devices. Being able of reproducing second and third order derivatives, the proposed model is also adequate for describing the nonlinear small-signal performance of these devices. Comparisons between experimental and simulated results, using the proposed model and other well-known models, demonstrate the validity of the new Ids model for various gate widths, technologies and gate peripheries.