Correlation between kink effect and frequency dispersion in pseudomorphic HEMTs

Reynoso-Hernandez, J. A. ; Plana, R. ; Escotte, L. ; Graffeuil, J. (1998) Correlation between kink effect and frequency dispersion in pseudomorphic HEMTs. In: Gallium Arsenide Applications Symposium. GAAS 1998, 5-6 October 1998, Amsterdam, The Netherlands.
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Abstract

This paper presents DC and AC frequency dispersion effects of the drain-source output impedance in commercially available pseudomorphic HEMTs. Inductive behaviour observed on the imaginary part of the drain-source impedance is attributed to deep traps in the GaAs substrate from DC and AC measurements versus temperature. On the other hand. DC and AC measurements indicate that kink effect signature is related to impact ionisation at the drain edge of the gate followed by trapping-detrapping processes in the substrate.

Abstract
Tipologia del documento
Documento relativo ad un convegno o altro evento (Atto)
Autori
AutoreAffiliazioneORCID
Reynoso-Hernandez, J. A.
Plana, R.
Escotte, L.
Graffeuil, J.
Settori scientifico-disciplinari
DOI
Data di deposito
16 Feb 2006
Ultima modifica
17 Feb 2016 14:35
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