Bessemoulin, A. ; Algani, C. ; Alquié, G. ; Fouad Hanna, V.
(1998)
Design and characterization of a 67 GHz 0.3 um AlGaAs/GaAs/AlGaAs HEMT monolithic amplifier in coplanar waveguide technology.
In: Gallium Arsenide Applications Symposium. GAAS 1998, 5-6 October 1998, Amsterdam, The Netherlands.
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Abstract
A three-stage V-band amplifier using only coplanar waveguide technology has been realized in a 0.3 um AlGaAs/GaAs/AlGaAs HEMT technology. Its characteristic has been measured up to 75 GHz. A gain better than 15.2 dB has been achieved at 67 GHz and a very good concordance of experimental and simulation results is obtained in the whole band. The chip size including bias circuits is 3.0 x 1.5 mm2.
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