Rudolph, M. ; Doerner, R. ; Heymann, P.
(1998)
New GaInP/GaAs-HBT large-signal model for power applications.
In: Gallium Arsenide Applications Symposium. GAAS 1998, 5-6 October 1998, Amsterdam, The Netherlands.
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Abstract
A new GaInP/GaAs HBT model for power applications is presented. It is based on the Gummel-Poon model. Additionally, it accounts for the increase of the thermal resistance at high temperatures and the high collector-current base push-out effect. The model is validated for GaInP/GaAs HBTs.
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