Abstract

GaAs components in MESFET, HEMT and HBT technology are a valuable supplement to traditional Si RF technologies and cover 15 to 20% of all RF applications. Their major application potential is in power amplifiers for mobile communication as well as WLAN and WLL transceiver circuits. Moreover, at MMW frequencies new applications like radio links, SATCOM and car distance radar support the introduction of GaAs hetero devices. Production quantities of about 100 million pcs and annual growth rates of about 30% clearly require large volume production strategies and cost positions well-known from Si counter­parts.