Abstract

Direct numerical solution of device transport equations for a transistor, and device modelling approaches based on an equivalent circuit representation, are often seen as essentially competing approaches within non-linear high-frequency CAD. Each method has clear advantages and limitations. This contribution is an attempt to demonstrate the benefits of combining some of the best features of both, using a simplified physical FET model which is highly computable and yet retains key consistencies with the internal semiconductor dynamics in terms of both particle and displacement current. Results are presented which show the high frequency limitations of conventional equivalent circuit model architectures with respect to non-quasistatic behaviour.