Abstract

Electroabsorption modulator drivers using 0.2 um gate length Pseudornorphic High Electron Mobility Transistors (PHEMT) for operation up to 20 Gb/s are presented. Both differential-pair based amplifiers and distributed amplifiers have been implemented and compared in terms of performances, power consumption, design, adaptability and adequation to the specific function to realize. It is shown that, in any case, an adaptation of the classical structure is necessary to get simultaneously the expected bit rate (20 Gb/s), drive voltage swing (2 Vp-p), and voltage gain (at least 10 dB).