Investigation of InGaP/GaAs multiple negative-differential-resistance (NDR) device prepared by MOCVD

Liu, Wen-Chau ; Tsai, Jung-Hui ; Thei, Kong-Beng ; Lin, Kun-Wei ; Cheng, C. C. ; Chen, H. R. (1996) Investigation of InGaP/GaAs multiple negative-differential-resistance (NDR) device prepared by MOCVD. In: Gallium Arsenide Applications Symposium. GAAS 1996, 5-6 June 1996, Paris, France.

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Abstract

An interesting multiple S-shaped negative-differential-resistance (NDR) phenomenon is observed for an InGaP/GaAs heterostructure-emitter bipolar transistor (HEBT) under the inverted operation mode. This behavior is resulted from a sequential avalanche multiplication and two-stage barrier lowering effect. Under normal operation mode, a typical common-emitter current gain of 60 is obtained at collector current density of 400A/cm2 for the studied HEBT without emitter-edge thinning structure.

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