Feasibility of one-crystal GaAs artificial pyroelectric array

Poplavko, Y.M. ; Moskalyuk, V.A. ; Timofeyev, A.I. ; Prokopenko, Y.V. ; Pereverzeva, L.P. (1996) Feasibility of one-crystal GaAs artificial pyroelectric array. In: Gallium Arsenide Applications Symposium. GAAS 1996, 5-6 June 1996, Paris, France.
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Abstract

Multifunction properties of GaAs and other III-V semi-insulating crystals could be expanded by the artificial decreasing of their electric response symmetry that could be transformed from piezo- into a pyroelectric class. Artificial pyroelectricity of III-V type semiconductors forms a basis for one-crystal pyroelectric sensor. The voltage sensitivity of GaAs (111)-cut is the similar to PZT pyroelectric ceramics, so GaAs wafer could be used as a thermal-to-electric transducer in a new microelectronic device named pyrotransistor. The last is uncooling far infrared (IR) detector based on MESFET technology.

Abstract
Document type
Conference or Workshop Item (Paper)
Creators
CreatorsAffiliationORCID
Poplavko, Y.M.
Moskalyuk, V.A.
Timofeyev, A.I.
Prokopenko, Y.V.
Pereverzeva, L.P.
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DOI
Deposit date
16 Feb 2006
Last modified
17 Feb 2016 14:37
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