Feasibility of one-crystal GaAs artificial pyroelectric array

Poplavko, Y.M. ; Moskalyuk, V.A. ; Timofeyev, A.I. ; Prokopenko, Y.V. ; Pereverzeva, L.P. (1996) Feasibility of one-crystal GaAs artificial pyroelectric array. In: Gallium Arsenide Applications Symposium. GAAS 1996, 5-6 June 1996, Paris, France.
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Abstract

Multifunction properties of GaAs and other III-V semi-insulating crystals could be expanded by the artificial decreasing of their electric response symmetry that could be transformed from piezo- into a pyroelectric class. Artificial pyroelectricity of III-V type semiconductors forms a basis for one-crystal pyroelectric sensor. The voltage sensitivity of GaAs (111)-cut is the similar to PZT pyroelectric ceramics, so GaAs wafer could be used as a thermal-to-electric transducer in a new microelectronic device named pyrotransistor. The last is uncooling far infrared (IR) detector based on MESFET technology.

Abstract
Tipologia del documento
Documento relativo ad un convegno o altro evento (Atto)
Autori
AutoreAffiliazioneORCID
Poplavko, Y.M.
Moskalyuk, V.A.
Timofeyev, A.I.
Prokopenko, Y.V.
Pereverzeva, L.P.
Settori scientifico-disciplinari
DOI
Data di deposito
16 Feb 2006
Ultima modifica
17 Feb 2016 14:37
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