Lu, Ke ; Snowden, Christopher M. ; Pollard, Roger D.
(1996)
Analysis of collapse patterns in multi-finger power AlGaAs/GaAs HBTs.
In: Gallium Arsenide Applications Symposium. GAAS 1996, 5-6 June 1996, Paris, France.
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Abstract
A new theory is developed in this paper to explain the collapse of current gain in multi-finger power AlGaAs/GaAs Heterojunction Bipolar Transistors. Two different collapse patterns are investigated. The reasons behind this unwanted phenomenon are clarified using a simple model to investigate the thermo-electrical interaction between the fingers. The method has been used to predict the collapse in AlGaAs/GaAs HBTs and the agreement is excellent.
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