Asmontas, S. ; Gradauskas, J. ; Seliuta, D. ; Silenas, A. ; Sirmulis, E.
(1996)
New GaAs infrared detector.
In: Gallium Arsenide Applications Symposium. GAAS 1996, 5-6 June 1996, Paris, France.
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Abstract
We report our results of experimental study of photovoltage induced by pulsed CO2 laser in GaAs p-n and 1-h junctions. We demonstrate that photoemission of hot carriers across the potential barrier and the crystal lattice heating are the dominant mechanisms in the photovoltage formation. The obtained results show that hot-carrier effects in inhomogeneous GaAs can be used to detect very short infrared laser pulses.
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