Abstract

A novel monolithically integrated photoreceiver for 10Gbit/s long-haul optoelectronic transmission systems is presented. The photoreceiver consists of a MSM photodetector and a HEMT amplifier, prepared on an identical InGaAs/InP 2DEG layer structure. The design considerations, preparation procedure and optoelectronic properties of discrete devices and results on a front-end receiver at 1.3um are presented. The MSM photodetector exhibits a responsivity of 0.21A/W and a 3dB bandwidth up to 16GHz. The HEMT amplifiers have a cut-off frequency fT of 45GHz and fmax of 85GHz. A bandwidth up to 16GHz is achievable on optimized photoreceiver circuits.