Light emission from direct and phonon-assisted processes in AlGaAs/GaAs HBT's

Villa, S. ; Lacaita, A. L. ; Di Carlo, A. ; Lugli, P. (1996) Light emission from direct and phonon-assisted processes in AlGaAs/GaAs HBT's. In: Gallium Arsenide Applications Symposium. GAAS 1996, 5-6 June 1996, Paris, France.
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Abstract

In this work we present a calculation of electroluminescence spectra from an AlGaAs/GaAs heterojunction bipolar tran­sistor (HBT) over the near-infrared and visible range (0.8-2.5 eV) obtained coupling a self-consistent Monte Carlo with minority carrier transport simulation to a nonlocal-pseudopotential algorithm. We compute both direct and phonon-assisted optical transition rates.

Abstract
Document type
Conference or Workshop Item (Paper)
Creators
CreatorsAffiliationORCID
Villa, S.
Lacaita, A. L.
Di Carlo, A.
Lugli, P.
Subjects
DOI
Deposit date
16 Feb 2006
Last modified
17 Feb 2016 14:38
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