Baeyens, Y. ; Schreurs, D. ; Nauwelaers, B. ; Van der Zanden, K. ; Van Hove, M. ; De Raedt, W. ; Van Rossum, M.
(1996)
A high-gain coplanar GaAs PHEMT K-band dual-gate amplifier.
In: Gallium Arsenide Applications Symposium. GAAS 1996, 5-6 June 1996, Paris, France.
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Abstract
In this paper, the performance of both GaAs and InP-based 0.15um dual-gate HEMTs in a cascode configuration is demonstrated by the successful design and realisation of a number of coplanar amplifiers. For a reactively matched single-stage GaAs PHEMT amplifier a gain of 20.9dB is obtained at 23GHz. At millimetre-wave frequencies, this gain can be further improved by using InP-based HEMTs as is shown by the realisation of a single-stage LM HEMT dual-gate amplifier with a stable gain of 16.4 dB and a good in-and output matching at 58.5 Ghz.
Abstract