Temperature-Dependent Analysis and RF-Model of 10Gbps VCSELs

Nuttinck, S. ; Gebara, E. ; Maeng, M. ; Laskar, J. (2002) Temperature-Dependent Analysis and RF-Model of 10Gbps VCSELs. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.
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Abstract

10Gbps Vertical Cavity Surface Emitting Lasers (VCSELs) are fully characterized and modeled at various temperatures of operation from DC to 15GHz. Studying devices under these conditions of operation enables one to acquire a better understanding of the device physics, and permits to build temperature-dependent VCSEL RF models necessary for accurate opto-electronic integrated circuit (OEIC) designs. The extracted model accurately predicts the reflection coefficient up to 15GHz above and below threshold at various biases and temperatures. This is the first time that a temperature-dependent RF model for VCSEL is presented.

Abstract
Document type
Conference or Workshop Item (Poster)
Creators
CreatorsAffiliationORCID
Nuttinck, S.
Gebara, E.
Maeng, M.
Laskar, J.
Subjects
DOI
Deposit date
17 Jun 2004
Last modified
17 Feb 2016 13:39
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