GaN-based FETs for microwave high-power applications

Shimawaki, Hidenori ; Miyamoto, Hironobu (2005) GaN-based FETs for microwave high-power applications. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.
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Abstract

The present status of GaN-based FETs has been described with a focus on microwave high-power performance. Our latest developments of the devices are presented, and the device and amplifier performance is reported. This includes the demonstration of a 230-W CW output power at 2 GHz, a 156-W pulsed output power at 4 GHz, and a 5.8-W CW output power at 30 GHz. The results confirmed excellent potential of the GaN-based FETs especially for high-voltage, high-power applications at microwave and millimeter-wave frequencies.

Abstract
Document type
Conference or Workshop Item (Paper)
Creators
CreatorsAffiliationORCID
Shimawaki, Hidenori
Miyamoto, Hironobu
Subjects
DOI
Deposit date
16 Feb 2006
Last modified
17 Feb 2016 14:39
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