Stevens, K.S. ; Welser, R.E. ; Chaplin, M. ; Lutz, C.R. ; Pan, N.
(2000)
Ledge Design of InGaP Emitter GaAs Based HBTs.
In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.
Full text available as:
Abstract
A wide range of emitter composition, thickness, and doping is studied via dc current gain measurements on large area GaAs based heterojunction bipolar transistors (HBTs) at both room and elevated temperatures. InGaP emitters offer the widest thickness and doping design window in terms of dc peak current gain, as compared with AlGaAs emitters. Remarkably, a 50 Å InGaP emitter HBT retains 50% gain of a more standard 500 Å emitter device. For state-of-the-art HBTs, a degraded peak gain is argued to be caused by an increased reverse hole injection current (IRHI). In light of previously published results which implicate IRHI as a mechanism for materials limited HBT reliability, we suggest dc current gain measurements on large-area HBTs give meaningful insights into the long term reliability of the structure. Specifically, the wider emitter thickness and doping design window offered by an InGaP emitter HBT could apply to reliability as well as to the demonstrated gain stability.
Abstract
A wide range of emitter composition, thickness, and doping is studied via dc current gain measurements on large area GaAs based heterojunction bipolar transistors (HBTs) at both room and elevated temperatures. InGaP emitters offer the widest thickness and doping design window in terms of dc peak current gain, as compared with AlGaAs emitters. Remarkably, a 50 Å InGaP emitter HBT retains 50% gain of a more standard 500 Å emitter device. For state-of-the-art HBTs, a degraded peak gain is argued to be caused by an increased reverse hole injection current (IRHI). In light of previously published results which implicate IRHI as a mechanism for materials limited HBT reliability, we suggest dc current gain measurements on large-area HBTs give meaningful insights into the long term reliability of the structure. Specifically, the wider emitter thickness and doping design window offered by an InGaP emitter HBT could apply to reliability as well as to the demonstrated gain stability.
Document type
Conference or Workshop Item
(Paper)
Creators
Subjects
DOI
Deposit date
17 Jun 2004
Last modified
17 Feb 2016 13:39
URI
Other metadata
Document type
Conference or Workshop Item
(Paper)
Creators
Subjects
DOI
Deposit date
17 Jun 2004
Last modified
17 Feb 2016 13:39
URI
Downloads
Downloads
Staff only: