The HFETs in charge preamplifiers for particles physics applications

Bertuccio, G. ; Longoni, A. ; Runge, K. ; Lauxtermann, S. (1994) The HFETs in charge preamplifiers for particles physics applications. In: Gallium Arsenide Applications Symposium. GAAS 1994, 28-30 April 1994, Turin, Italy.
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Abstract

We analyse the performances of heterostructure field effect transistors (HFETs) for low-noise fast readout electronics for detectors of elementary particles. We discuss the advantages and the limits of these devices in comparison with silicon transistors. We also present the first integrated charge preamplifier fully based on HFETs and the experimental results obtained.

Abstract
Document type
Conference or Workshop Item (Paper)
Creators
CreatorsAffiliationORCID
Bertuccio, G.
Longoni, A.
Runge, K.
Lauxtermann, S.
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DOI
Deposit date
16 Feb 2006
Last modified
17 Feb 2016 14:41
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