Camin, D. V. ; Pessina, G. ; Previtali, E. ; Pillan, Margherita
(1994)
Towards a model of GaAs MESFETs for the design of cryogenic integrated circuits.
In: Gallium Arsenide Applications Symposium. GAAS 1994, 28-30 April 1994, Turin, Italy.
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Abstract
The read-out of cryogenic detectors for nuclear and particle physics, requires compatible front-end electronics operating at low temperature. GaAs MESFETs exhibit suitable DC and noise characteristics at the temperatures of interest (77 K and 4 K). Since at cryogenic temperatures the electrical characteristics of the GaAs MESFETs differ significantly from those typical of 300K, a new model must be developed to employ computer circuit simulation during the design.
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