Abstract

A new method to simultaneously determine the complete Tee and hybrid Pi equivalent circuit parameters of the SiGe HBT including parasitic intrinsic base resistance, is presented. This approach employs analytically derived expressions and is based on the analysis of measured scattering parameters over an adequate frequency range. This paper shows that a one-to-one correspondence exists between Tee and Pi topologies and very good fit between measured and simulated scattering parameters in the frequency range between 0.05 to 50 GHz is obtained.