Design and technology of AlGaAs/GaAs HBT for high temperature circuits

Fricke, K. ; Krozer, V. ; Lee, W.L. ; Ruppert, M. ; Schubler, M. ; Schweeger, G. ; Sigurdardottir, A. ; Hartnagel, H.L. (1994) Design and technology of AlGaAs/GaAs HBT for high temperature circuits. In: Gallium Arsenide Applications Symposium. GAAS 1994, 28-30 April 1994, Turin, Italy.
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Abstract

In the last years HBT with strongly improved performance for application at room temperature [1, 2] have been demonstrated. However, the technology for high temperature devices and circuits must be adopted. The layer design and the technology of AlGaAs/GaAs HBT for high-temperature circuits up to 623 K is presented in this paper. As a possible application of these devices an operational amplifier circuit is fabricated and measured up to 473 K.

Abstract
Tipologia del documento
Documento relativo ad un convegno o altro evento (Atto)
Autori
AutoreAffiliazioneORCID
Fricke, K.
Krozer, V.
Lee, W.L.
Ruppert, M.
Schubler, M.
Schweeger, G.
Sigurdardottir, A.
Hartnagel, H.L.
Settori scientifico-disciplinari
DOI
Data di deposito
16 Feb 2006
Ultima modifica
17 Feb 2016 14:41
URI

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