Fricke, K. ; Krozer, V. ; Lee, W.L. ; Ruppert, M. ; Schubler, M. ; Schweeger, G. ; Sigurdardottir, A. ; Hartnagel, H.L.
(1994)
Design and technology of AlGaAs/GaAs HBT for high temperature circuits.
In: Gallium Arsenide Applications Symposium. GAAS 1994, 28-30 April 1994, Turin, Italy.
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Abstract
In the last years HBT with strongly improved performance for application at room temperature [1, 2] have been demonstrated. However, the technology for high temperature devices and circuits must be adopted. The layer design and the technology of AlGaAs/GaAs HBT for high-temperature circuits up to 623 K is presented in this paper. As a possible application of these devices an operational amplifier circuit is fabricated and measured up to 473 K.
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