Prasad, S.J. ; Haynes, C. ; Vetanen, B. ; Beers, I. ; Park, S.
(1994)
A 12.5 GHz divide-by-eight prescaler in GaInP/GaAs HBT technology.
In: Gallium Arsenide Applications Symposium. GAAS 1994, 28-30 April 1994, Turin, Italy.
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Abstract
A fully integrated pre-amplifier and a static divide-by-eight prescaler clocking at 12.5GHz realized in a GaInP/GaAs HBT technology is presented. The HBT process incorporates Schottky diodes, nichrome resistors, MIM capacitors and air-bridge inductors. HBTs with emitter size of 3? x 10?. have current gains of 145 and fT and fmaxof 60GHz and 45GHz respectively. Unloaded ECL gate delays of 28ps are obtained from ring oscillator measurements.
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