Abstract

The growth of highly uniform, state-of-the-art InGaP/GaAs heterojunction bipolar transistors is demonstrated in a multi-wafer 6-inch configuration (AIX 2600). The uniformity of thickness, doping, composition, interface properties and minority carrier lifetime are assessed by electrical and structural characterization measurements, and shown to vary by less than ±3% across the wafer. The dc current gain versus base sheet resistance on a high gain structure, has a non-linear dependence on base sheet resistance, typical of high performance InGaP/GaAs HBTs.