Enhancement/Depletion Mode InGaP/AlGaAs PHEMT Process for High Efficiency Power Amplifiers

Tkachenko, Y. ; Zhao, Y. ; Wei, C. ; Bartle, D. (2000) Enhancement/Depletion Mode InGaP/AlGaAs PHEMT Process for High Efficiency Power Amplifiers. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.
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Abstract

An integrated enhancement/depletion mode InGaP/AlGaAs power PHEMT process is demonstrated for various single- and dual-supply high efficiency power amplifiers. This technology utilizes excellent etch selectivity and surface charge screening properties of InGaP material. At 900 MHz D-mode PHEMT features output power density of 630 mW/mm with PAE=85% at 7 V, while E-mode PHEMT features PAE>70% from 2 to 7 V and high output power densities, especially at lower voltages.

Abstract
Document type
Conference or Workshop Item (Paper)
Creators
CreatorsAffiliationORCID
Tkachenko, Y.
Zhao, Y.
Wei, C.
Bartle, D.
Subjects
DOI
Deposit date
17 Jun 2004
Last modified
17 Feb 2016 13:39
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