InP-BASED HBT with graded InGaAlAs BASE layer grown by LP-MOVPE

Kim, S-O. ; Velling, P. ; Agethen, M. ; Reimann, Th. ; Prost, W. ; Tegude, F.-J. (2000) InP-BASED HBT with graded InGaAlAs BASE layer grown by LP-MOVPE. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.
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Abstract

A compositionally graded InGaAlAs:C base layer is inserted in an InP-based HBT grown by LP-MOVPE with a novel non-gaseous source configuration. Due to the addition of 6% Al the active hole concentration in the HBT base layer, deduced from Hall measurements, is increased from 1.5 10 19 to 3.8 10 19 cm -3 . Moreover, an In-grading within the base layer results in an intrinsic electric field of about 5.4 kV/cm. A high dc current gain of β = 35 is provided at a high p-type doping level. First HBT devices exhibit a current gain cut-off frequency of fT = 117 GHz and an unilateral gain cut-off frequency of 90 GHz (not de-embedded).

Abstract
Tipologia del documento
Documento relativo ad un convegno o altro evento (Atto)
Autori
AutoreAffiliazioneORCID
Kim, S-O.
Velling, P.
Agethen, M.
Reimann, Th.
Prost, W.
Tegude, F.-J.
Settori scientifico-disciplinari
DOI
Data di deposito
17 Giu 2004
Ultima modifica
17 Feb 2016 13:40
URI

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