CAD-oriented modeling of the optically-controlled GaAs MESFET

Calandra, Enrico F. ; Sirna, Guglielmo (1994) CAD-oriented modeling of the optically-controlled GaAs MESFET. In: Gallium Arsenide Applications Symposium. GAAS 1994, 28-30 April 1994, Turin, Italy.
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Abstract

A CAD-oriented circuit model for the optically-controlled GaAs MESFET was developed on the basis of a dedicated characterization method. By exploiting separation of direct and indirect photo-induced effects, a simple but accurate modeling of both the static and microwave characteristics of the illuminated transistor was achieved. As demonstrated by the test circuits implemented, good agreement between measured and simulated performances can thus be obtained with limited device parameter identification effort.

Abstract
Document type
Conference or Workshop Item (Paper)
Creators
CreatorsAffiliationORCID
Calandra, Enrico F.
Sirna, Guglielmo
Subjects
DOI
Deposit date
17 Feb 2006
Last modified
17 Feb 2016 14:44
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