Abstract

A large-signal lumped-parameter model for pseudomorphic HEMT devices (P-HEMTs) is described. The model was implemented in the HARPE/OSA environment on the basis of the Angelov approach and further developed through comparison with three generations of SIEMENS P-HEMTs; an MDS version is also available. The final model shows very good agreement with experimental data for the DC and small-signal parameters on a wide range of bias points; preliminary comparisons carried out on large-signal measurements are also satisfactory.