Hot-carrier-induced radiation emission in AlGaAs/GaAs high electron mobility transistors and GaAs MESFETs

Zanoni, Enrico ; Bigliardi, Stefano ; Capelletti, Rosanna ; Lugli, Paolo ; Magistrali, Fabrizio ; Manfredi, Manfredo ; Paccagnella, Alessandro ; Testa, Nicoletta ; Canali, C. (1990) Hot-carrier-induced radiation emission in AlGaAs/GaAs high electron mobility transistors and GaAs MESFETs. In: Gallium Arsenide Applications Symposium. GAAS 1990, 19-20 April 1990, Rome, Italy.
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Abstract

New results are presented concerning the spectral distribution in the 1.7 - 2.9 eV range of the electromagnetic radiation emitted by 0.5 mm GaAs MESFETs and 0.3 mm AlGaAs/GaAs HEMTs biased at high drain voltages (> 4.0 V). The energy distribution of the emitted light intensity cannot be described by assuming a maxwellian electron energy distribution function. The detection of emitted radiation is markedly correlated with the presence of non-negligible gate and substrate hole currents, which are not due to breakdown of the gate-drain Schottky junction, but are due to collection of holes generated by impact ionization.

Abstract
Document type
Conference or Workshop Item (Paper)
Creators
CreatorsAffiliationORCID
Zanoni, Enrico
Bigliardi, Stefano
Capelletti, Rosanna
Lugli, Paolo
Magistrali, Fabrizio
Manfredi, Manfredo
Paccagnella, Alessandro
Testa, Nicoletta
Canali, C.
Subjects
DOI
Deposit date
17 Feb 2006
Last modified
17 Feb 2016 14:44
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