Abstract

A GaAs gate array family is fabricated with Thomson Composants Microondes Self Aligned Gallium Arsenide process with 0.8 um Leff E/D MESFETs, 3 metal layers on 4" wafers. The complexity ranges from 3.000 to 30.000 DCFL 2 inputs NOR gates. The unloaded gate delay is 70 ps with a power of 0.3 mW. Two personnalizations of the 3K array have been designed by the Laboratoire d'Elecyronique de Rennes for an HDTV system. They consist in 11:1 serializer and 1:11 deserializer with a throughput of 432 MBit/s.