Abstract

There is a considerable interest in the development of high power, high efficiency HFETs for millimeter wave applications. Thanks to the great progress accomplished during the last few years in MBE growth multiheterojunction devices have reach such a maturity that they now offer attractive capabilities. This paper reports on results obtained with especially designed structures and discusses their optimization on the basis of modelling and characterizations. It shows that devices with more than 1A of drain current, 10 V of Breakdown voltage, 60 GHz of cut-off frequency are now within the realm of possibility.