A compact X-band GaAs monolithic balanced FET mixer

Robertson, I. D. ; Aghvami, A. H. (1992) A compact X-band GaAs monolithic balanced FET mixer. In: Gallium Arsenide Applications Symposium. GAAS 1992, 27-29 April 1992, Noordwijk, The Netherlands.
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In this paper, a novel monolithic balanced FET mixer is described, which has a measured conversion gain of ldB over 5 to 12 GHz. A new circuit technique has been developed which gives both high performance and low complexity. As a result, the mixer is expected to find applications in state-of-the-art monolithic subsystems for communications and radar. The technique employed is to use a passive lumped-element Wilkinson combiner feeding a common-source/common-gate FET pair. The FETs operate as both active balun and mixer elements, giving a very compact balanced mixer. After an exhaustive investigation of MMIC mixers, this new technique is thought to be the optimum blend of active and passive circuitry. As a result, the mixer has the same simplicity and ease-of-use associated with existing double-balanced diode mixers, but in addition has conversion gain and can be directly integrated into MMIC subsystems.

Document type
Conference or Workshop Item (Paper)
Robertson, I. D.
Aghvami, A. H.
Deposit date
17 Feb 2006
Last modified
17 Feb 2016 14:46

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