Abstract

In this paper we will discuss for the first time the use of the new "gas foil rotation" technology for growth in a low pressure reactor. InP, GalnAs and GalnAsP layers grown on 2" substrates applying this substrate rotation show film thickness variations less than 2% over the entire wafer. Also resistivity measure­ments on doped binary layers showed variations below 2%. The lattice mismatch variation of ternary and quaternary layers was smaller than 5x10-4. The electrical properties of GalnAs and InP as residual carrier concentration and electron mobility in undoped layers were identical to those measured on reference layers grown in the same reactor on a static susceptor. Growth parameters had not to be modified when using this technique.