1W/mm GaAs pHEMT for realization of linear power amplifier in the K band.

Hue, X. ; Rogeaux, E. ; Cazaux, Jean-Louis ; Mallet, A. ; Lapierre, L. ; Boudart, B. ; Bonte, B. ; Crosnier, Y. (2000) 1W/mm GaAs pHEMT for realization of linear power amplifier in the K band. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.
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Abstract

The realization and characterization of Al0.22Ga0.78As/In0.22Ga0.78As/GaAs power pHEMT are reported. This structure was optimized to obtain a quasi flat transconductance profile to increase the device linearity near the compression. A maximum single carrier output power higher than 0.8 W/mm for 2 dB compression has been obtained, with more than 30 % power added efficiency and 7.4 dB linear gain at 18.5 GHz. Two tones intermodulation distortion have shown a C/I ratio of 19.9 dBc and 42.3 dBc to the 3 rd and 5 th order respectively, for an input two tones power corresponding to 1 dB compression input power in CW.

Abstract
Tipologia del documento
Documento relativo ad un convegno o altro evento (Atto)
Autori
AutoreAffiliazioneORCID
Hue, X.
Rogeaux, E.
Cazaux, Jean-Louis
Mallet, A.
Lapierre, L.
Boudart, B.
Bonte, B.
Crosnier, Y.
Settori scientifico-disciplinari
DOI
Data di deposito
17 Giu 2004
Ultima modifica
17 Feb 2016 13:40
URI

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