Rapid thermal annealing of Si implanted GaAs in Arsenic overpressure

Bianchi, S. ; Castelli, A. ; Ehrenheim, A. ; Vidimari, F. (1990) Rapid thermal annealing of Si implanted GaAs in Arsenic overpressure. In: Gallium Arsenide Applications Symposium. GAAS 1990, 19-20 April 1990, Rome, Italy.
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Abstract

A new method of rapid thermal annealing (RTA) in arsenic over­pressure using a high thermal mass reactor and a very low thermal mass sub­strate holder has been developed. Efficient activation of Si implantation has been obtained only with proper As overpressure. The design of the substrate holder allowed a very uniform activation of the implanted layers as well as a negligible formation of dislocation slips. This method of rapid thermal annealing was successfully applied to the fabrication of broadband 4-8 GHz MMIC amplifiers.

Abstract
Tipologia del documento
Documento relativo ad un convegno o altro evento (Atto)
Autori
AutoreAffiliazioneORCID
Bianchi, S.
Castelli, A.
Ehrenheim, A.
Vidimari, F.
Settori scientifico-disciplinari
DOI
Data di deposito
17 Feb 2006
Ultima modifica
17 Feb 2016 14:47
URI

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