Temcamani, F. ; Crosnier, Y. ; Vanbremeersch, J. ; Salmer, G.
(1990)
Optimization of multiheterojunction AlGaAs/GaAs HEMT's for microwave power amplification.
In: Gallium Arsenide Applications Symposium. GAAS 1990, 19-20 April 1990, Rome, Italy.
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Abstract
A theoretical and experimental study concerning a three channels power HEMT is presented. The structure has been, first, optimized using an adequate simulation. Then many technological realizations have been achieved at the laboratory. Measurements performed with these devices give results very encouraging and permit to foresee superior performances relatively to that of GaAs power MESFET's.
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