Optimization of multiheterojunction AlGaAs/GaAs HEMT's for microwave power amplification

Temcamani, F. ; Crosnier, Y. ; Vanbremeersch, J. ; Salmer, G. (1990) Optimization of multiheterojunction AlGaAs/GaAs HEMT's for microwave power amplification. In: Gallium Arsenide Applications Symposium. GAAS 1990, 19-20 April 1990, Rome, Italy.
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Abstract

A theoretical and experimental study concerning a three channels power HEMT is presented. The structure has been, first, optimized using an adequate simulation. Then many technological realizations have been achieved at the laboratory. Measurements performed with these devices give results very encouraging and permit to foresee superior performances relatively to that of GaAs power MESFET's.

Abstract
Tipologia del documento
Documento relativo ad un convegno o altro evento (Atto)
Autori
AutoreAffiliazioneORCID
Temcamani, F.
Crosnier, Y.
Vanbremeersch, J.
Salmer, G.
Settori scientifico-disciplinari
DOI
Data di deposito
17 Feb 2006
Ultima modifica
17 Feb 2016 14:47
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