Development of time domain behanioural non-linear models for microwave devices and ICS from vectorial large-signal measurements and simulations

Schreurs, D. ; Tufillaro, N. ; Wood, J. ; Usikov, D. ; Barford, L. ; Root, D.E. (2000) Development of time domain behanioural non-linear models for microwave devices and ICS from vectorial large-signal measurements and simulations. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.
Full text available as:
[thumbnail of GAAS_7_2.pdf]
Preview
PDF
Download (68kB) | Preview

Abstract

We have developed a procedure to determine a behavioural non-linear model for microwave devices and ICs that is directly based on vectorial large-signal measurements. For the examples of a HEMT and an amplifier IC, we represent the terminal currents in the time domain by a dynamic model that is fitted to the embedded terminal voltages.

Abstract
Document type
Conference or Workshop Item (Paper)
Creators
CreatorsAffiliationORCID
Schreurs, D.
Tufillaro, N.
Wood, J.
Usikov, D.
Barford, L.
Root, D.E.
Subjects
DOI
Deposit date
17 Jun 2004
Last modified
17 Feb 2016 13:40
URI

Other metadata

Downloads

Downloads

Staff only: View the document

^