Development of time domain behanioural non-linear models for microwave devices and ICS from vectorial large-signal measurements and simulations

Schreurs, D. ; Tufillaro, N. ; Wood, J. ; Usikov, D. ; Barford, L. ; Root, D.E. (2000) Development of time domain behanioural non-linear models for microwave devices and ICS from vectorial large-signal measurements and simulations. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.
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Abstract

We have developed a procedure to determine a behavioural non-linear model for microwave devices and ICs that is directly based on vectorial large-signal measurements. For the examples of a HEMT and an amplifier IC, we represent the terminal currents in the time domain by a dynamic model that is fitted to the embedded terminal voltages.

Abstract
Tipologia del documento
Documento relativo ad un convegno o altro evento (Atto)
Autori
AutoreAffiliazioneORCID
Schreurs, D.
Tufillaro, N.
Wood, J.
Usikov, D.
Barford, L.
Root, D.E.
Settori scientifico-disciplinari
DOI
Data di deposito
17 Giu 2004
Ultima modifica
17 Feb 2016 13:40
URI

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