Design and performance of GaAs MMIC's for L-band low noise front-end applications

Bonato, Gian Luca ; Boveda, Angel ; Ripolles, Olga (1992) Design and performance of GaAs MMIC's for L-band low noise front-end applications. In: Gallium Arsenide Applications Symposium. GAAS 1992, 27-29 April 1992, Noordwijk, The Netherlands.
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Abstract

This paper describes the design and performance of a GaAs monolithic Low Noise Amplifier and Mixer designed for use in communication systems in the 1.5 - 2.5 GHz frequency band. The low noise amplifier uses a reactive serial feedback configuration and has a measured noise figure of 1.8 dB at room temperature and an associated gain of 20 dB over the full bandwidth. The mixer IC uses an active adder and a FET Mixer, including also an IF output buffer. It provides 9 dB conversion gain without need of external bias networks. This was the first design step towards the integration of the two circuit functions on a single chip.

Abstract
Document type
Conference or Workshop Item (Paper)
Creators
CreatorsAffiliationORCID
Bonato, Gian Luca
Boveda, Angel
Ripolles, Olga
Subjects
DOI
Deposit date
17 Feb 2006
Last modified
17 Feb 2016 14:48
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