Abstract

The concept of a linear transistor, called d-FET, was developed. The device conduction path is formed by a two-dimensional electron gas, and has a simpler construction in comparison to heterostructure devices, such as the High Electron Mobility Transistor (HEMTS). A computer program was developed so as to self-consistently simulate the electrical and physical characteristics under the gate region. By using this simulations, the semiconductor film to be grown by MOCVD was optimised. The film showed a two-dimensional density of 1.1012 cm-2 and FWHM of only 3O A. The fabricated device characteristics were in good agreement with the simulated ones, with a transconduct once of 130 mS/mm. and cut-off frequency of 8 GHz. The promising features of this type of device are presented and analysed.